110年 - 110 國立高雄大學_碩士班招生考試_化學工程及材料工程學系：材料科學導論#102934

(a) Plot the basal plane and directions.

(b) Calculate linear densities in the two directions. (unit: number of atom per nm)

(c). Determine the indices for the planes shown in the following hexagonal cells.

2. (1) Explain the physical meaning of Brag’s law by figures, formulas, and words.

(a) the interplanar spacing for this set of planes,

(c) the atomic radius.

(a) make schematic sketches of the microstructure that would be observed for conditions of very slow cooling at the following temperatures: 1000°C, 728°C, and 726°C. Label all phases and indicate their approximate compositions.

(b) Consider the structures at 726°C, how many kilograms each of total ferrite and cementite form? How many kilograms each of pearlite and the proeutectoid phase form?

4. (a) Consider a single crystal of BCC iron oriented such that a tensile stress is applied along a [010] direction. If the applied stress is 80 MPa, compute the resolved shear stress in a direction on each of the plane (110) and (101) planes.

(b) on the basis of the resolved shear stress values, which slip system(s) is (are) most favorable ?

5. Explain the mechanisms of “activation polarization” and “concentration polarization” in electrochemical processes by words and diagrams, respectively.

6. The figure below shows frequency dependence of the dielectric constant for a dielectric material. Why there are three regions for dielectric constant? Explain the mechanisms involved by figures and words.

110年 - 110 國立高雄大學_碩士班招生考試_化學工程及材料工程學系：材料科學導論#102934

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