8 要獲致高電流增益(Current Gain)之雙極性接面電晶體(Bipolar Junction Transistor),則下列何者
為正確?
(A)基極(base)很薄且為輕度摻雜(Lightly Doped)
(B)基極(base)很厚且為輕度摻雜(Lightly Doped)
(C)基極(base)很薄且為重度摻雜(Heavily Doped)
(D)基極(base)很厚且為重度摻雜(Heavily Doped)
詳解 (共 1 筆)
未解鎖
高電流增益意即β要大 1.基極寬度必須...