4.(30%) Figure 3 shows the common-source amplifer with an ideal current source I = 0.4 mA, 
= 200 kΩ, RG = 2 MΩ, RD =RL = 20 kΩ, C1 = C2 = C3 = 1 HF. The MOSFET has the device parameters: I = 0.2 μm, W = 2 μm, 
= 10 fP/μm2, μn = 450 cm2/V-s, r0 = 100 kΩ, 
= 3.2 fF, 
can be neglected, and the source terminal of MOSFET is connected to its body terminal. Please calculate (1) the transconductance gm of the MOSFET, (2) the AM， f1，f2，f3 (let f1 ＜f2＜f3) values of the overall low- frequency transfer function 
, (3) the upper 3-dB frequency fr by using open-circuit time constants method. (5%, 5%*4, 5%)
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. The cross-sectional area A = 100 μm2. When this p-n diode is reverse biased with the reverse voltage VR = 1 V, please calculate the depletion width of n-side Wn and p-side Wp, the charge stored on each side of the depletion region QJ, the reverse saturation current Is and the junction capacitance Cj. Let Si intrinsic concentration ni = 1.5 
cm , and Si permittivity εsi = 11.7 x 8.85 x
F/cm. Diffusion length and diffusion coefficient of electron in p-side are Ln = 10 pum and Dn= 18 cm2/s, respectively. Diffusion length and diffusion coeticient of hole in n-side are Lp = 5 um and Dp = 10 cm2 /s, respectively. (Wn, Wp, QJ, Is, Cj: 5%*5)