申論題

1. (25%) Consider an ideal Si p-n diode with abrupt junction at T = 300 K (V_T= 25.9 mV) for which the doping concentrations are N_A =. The cross-sectional area A = 100 μm². When this p-n diode is reverse biased with the reverse voltage V_R = 1 V, please calculate the depletion width of n-side W_n and p-side W_p, the charge stored on each side of the depletion region Q_J, the reverse saturation current Is and the junction capacitance C_j. Let Si intrinsic concentration n_i = 1.5 cm , and Si permittivity εsi = 11.7 x 8.85 xF/cm. Diffusion length and diffusion coefficient of electron in p-side are L_n = 10 pum and D_n= 18 cm²/s, respectively. Diffusion length and diffusion coeticient of hole in n-side are L_p = 5 um and D_p = 10 cm² /s, respectively. (W_n, W_p, Q_J, I_s, C_j: 5%*5)