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110年 - 110 國立中山大學碩士暨碩士專班招生考試_部分碩士班:材料科學導論#104303
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(3) Use schematic drawings to show the locations (include point coordinates) of tetrahedral and octahedral interstitial sites within (a) BCC and (b) FCC unit cells. 10 points
相關申論題
(1)如果你要在维基百科撰寫有關下列名詞之內容你會如何撰寫?(a)Dislocation(b)Fatigue,c Shape memory alloy, (d) Heterogeneous nucleation, and (e) Bragg diffraction. 5 points each, 25 points.
#441585
(2) A schematic solidification grain structure is shown below. Explain why this structure is formed. 10 points
#441586
(4) Give schematic magnetization curves for soft and hard magnetic materials. Briefly explain your 8 points
#441588
(5) The engineering stress-strain curves shown below represent two different types of yielding behaviors of metals. Discuss these two types of yielding deformation. 8 points.
#441589
(6) Discuss how the dopant content and temperature affect charge carriers' mobility in a semiconducting material. 8 points
#441590
(7) Calculate the indices of the intersection line direction of (112) and crystal planes in cubic crystal structure.
#441591
(8) Give all your knowledge about vacancies in crystals. 8 points.
#441592
(9) How to define the primary and cross slip systems of a crystal when it is sheared? 6 points
#441593
(10) Can fatigue occur in a material without external applied mechanical stresses? If yes, give your reason. 6 points
#441594
(11) Discuss the effect of the following factors on the recrystallization behavior of deformed metals. (a) Amount of strain, (b) Initial grain size, and (c) Material purity. 6 points 5 points.
#441595
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110年 - 110 國立中山大學碩士暨碩士專班招生考試_部分碩士班:材料科學導論#104303
110年 · #104303
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