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(7) Calculate the indices of the intersection line direction of (112) and crystal planes in cubic crystal structure.

相關申論題

(1)如果你要在维基百科撰寫有關下列名詞之內容你會如何撰寫?(a)Dislocation(b)Fatigue,c Shape memory alloy, (d) Heterogeneous nucleation, and (e) Bragg diffraction. 5 points each, 25 points.

(2) A schematic solidification grain structure is shown below. Explain why this structure is formed. 10 points

(3) Use schematic drawings to show the locations (include point coordinates) of tetrahedral and octahedral interstitial sites within (a) BCC and (b) FCC unit cells. 10 points

(4) Give schematic magnetization curves for soft and hard magnetic materials. Briefly explain your 8 points

(5) The engineering stress-strain curves shown below represent two different types of yielding behaviors of metals. Discuss these two types of yielding deformation. 8 points.

(6) Discuss how the dopant content and temperature affect charge carriers' mobility in a semiconducting material. 8 points

(8) Give all your knowledge about vacancies in crystals. 8 points.

(9) How to define the primary and cross slip systems of a crystal when it is sheared? 6 points

(10) Can fatigue occur in a material without external applied mechanical stresses? If yes, give your reason. 6 points

(11) Discuss the effect of the following factors on the recrystallization behavior of deformed metals. (a) Amount of strain, (b) Initial grain size, and (c) Material purity. 6 points 5 points.

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110年 - 110 國立中山大學碩士暨碩士專班招生考試_部分碩士班:材料科學導論#104303

110年 · #104303

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