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申論題資訊

試卷:109年 - 108 國立中山大學_碩士班招生考試_電機系(甲組):半導體概論#124080
科目:中山◆電機◆電磁學
年份:109年
排序:0

題組內容

3. An abrupt p-n junction with donor concentration = ND and acceptor concentration = NA. The diode is very long so you can assume the ends are at x = positive and negative infinity. The diode is forward biased.

申論題內容

(b) Without doing any more derivations, but by symmetry arguments only, provide an expression for the minority carrier current in the n quasi-neutral region.