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申論題資訊

試卷:107年 - 107 國立中山大學_碩士班招生考試_電機系(甲組):電子學#110217
科目:中山◆電機◆電子學
年份:107年
排序:0

申論題內容

4.(30%) Consider the BiCMOS amplifier shown in Fig. 4 has62f5ca8103536.jpg= 100 kΩ, RG = 10 MΩ, Rs = 6.8 kΩ, Rc = 3kΩ, RL= 1 kΩ, CI= 0.1 μF, C2 = 1 μF. The BJT has62f5cb182996f.jpg 0.7 V, β = 200, Cμ = 0.8 pF, fT = 600 MHz, and thermal voltage VT= 25 mV. The MOSFET has 62f5cb5db3aca.jpg= 1 V, 62f5cb80895d9.jpg = 2 mA/V2, and62f5cbaa859a8.jpg= 1 pF. Neglect the Early effect and channel length modulation effect. (a) Consider the DC bias circuit. Neglect the base current of Q2 in determining the current in Q1. Find the DC drain current in Q1 and collector current in Q2. (b) Consider the circuit at low frequencies. Deternine the frequency of the poles due to C1 and C2. (c) Consider the circuit at higher frequencies. Use open-circuit time constants to estimate fH. (5%,5%,5%,5%,10%)


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