題組內容

1. Titanium dioxide is a wide-bandgap seniconductor that is considered as an insulating dielectric in VLSI capacitors and for use in solar applications such as solar cells and photocatalyst. Thin films of TiO2 can be prepared using chemical vapor deposition from gascous titanium tetra-isopropoxide (TTIP). The overall reaction is 
Ti(OC3H7)4 → TO2+4C3H6+2H2
The reaction mechanism in a CVD is believed to be 
TTIP (g) + TTIP (g) 61ef8d45913bf.jpg I(g) + P (g) 
I(g)+S61ef8d45913bf.jpg I.S
 I.S → TiO2+ P2(g)
 Where I is an active intermediate, S is an active site, Pi is one set of reaction products (e.g. H2O, C3H6) and P2 is another set. Assuming the homogeneous gas-phase reaction for TTIP is in equilibrium, please answer the following question

(a) (18%) Derive a rate law for the deposition of TiO2