1. Titanium dioxide is a wide-bandgap seniconductor that is considered as an insulating dielectric
in VLSI capacitors and for use in solar applications such as solar cells and photocatalyst. Thin
films of TiO
2 can be prepared using chemical vapor deposition from gascous titanium
tetra-isopropoxide (TTIP). The overall reaction is
Ti(OC3H7)4 → TO2+4C3H6+2H2O
The reaction mechanism in a CVD is believed to be
TTIP (g) + TTIP (g)
I(g) + P (g)
I(g)+S
I．S
I．S → TiO2+ P2(g)
Where I is an active intermediate, S is an active site, Pi is one set of reaction products (e.g. H2O,
C3H6) and P2 is another set. Assuming the homogeneous gas-phase reaction for TTIP is in
equilibrium, please answer the following question
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