(a) What is its full-power bandwidthf_M?

(b) If an input sinusoidal signal with frequency f = 5fM is applied to a unity-gain follower configuration as shown in Fig. 1, what is the maximum possible amplitude that can be accommodated at the output without incurring SR distortion? (5%*2) 

2.(10%) Consider a circuit of Fig. 2 with a BJT device having β = 100 when it is biased in the active region. The constant voltage drop 0.7 V approximation can be used for the turn-on of a p-n junction, and the constant voltage drop ~ 0.2 V approximation can be used when the BJT is biased in the saturation region. Please calculate the collector current Ic and base current IB. (5%*2) 

3. (15%) Consider the voltage amplifier of Fig. 3(a) with Voo = 2 V, Rp = 20 kQ, and with a MOSFET specified to have Vt = 0.5 V,(W/L) = 5 mA/V2, and λ = 0 . Calculate the of the voltage transfer characteristic as shown in Fig. 3(b). (5%*3)

4. (15%) Consider the yoltage amplifier of Fig. 4 with a MOSFET specified to have Vt=  1.5 V, (WIL) = 0.5 mArV2, andλ = 0.02. The coupling capacitors C can block DC component and pass AC component. Calculate (a) the small-signal voltage gain (b) its input resistance , and (O) the largest allowable input signal. (5%*3)

5. (25%) Consider the voltage amplifier of Fig. 5 with two BJT devices: Q1 and Q2, having β= 100 when they are biased in the active region. The coupling capacitors C can block DC component and pass AC component. The voltage supplies are 10 V and the thermal voltage VT = 25.9 mV. The constant voltage drop 0.7 V approximation can be used for the turn-on of a p-n junction. In addition, other resistances are also included in the Fig. 5. Please come out the following parameters: (a) DC base voltage of Q1:, (b) DC base voltage of Q2: , (c) DC collector voltage of Q2: . (d) overall AC voltage gain. (5%, 5%, 5%, 10%) 

6. (25%) Consider the voltage amplifier of Fig. 6 with a BJT device having β = 100 when it is biased in the active region. The coupling capacitors C1 = C2 = C3 = 1 μF. The voltage supplies are 5 V and the thermal voltage VT= 25.9 mV. If the transistor is specified to have fT = 700 MHz and Cμ = 1 pi. The constant voltage drop 0.7 V approximation can be used for the turn-on of a p-n junction. In addition. other resistances are also included in the Fig. 6. Please calculate (a)f1，f2，f3 (let f1 ＜f2＜f3) values of the low-frequcncy transfer function (b) the upper 3-dB frequcncy fHby using open-circuit time constants method if the ro and rx effect are neglected. (5%*3, 10%) 

4. (30%) Figure 4 shows a CC-CE amplifier with = RL = 5 kΩ, I1 = I2 = 1mA, and identical transistors with β = 100, fT = 500 MHz, Cμ = 5pF, and Cc = 2uF. The thermal voltage VT= 25mV. For simplicity, neglect ro and rx effect. Please find (a) the input resistance(b) the midband gain AM, (c) the Cπof the BJTs, and (d) 3-dB frequency of the upper end of the midband, fH (using open-circuit time- constants method). (5%, 5%, 5%, 15%)

3. (30%) Figure 3 is the two-stage CMOS op amp configuration. All NMOSFETs have the same W/L = 10um/0.5um, = 0.5V, = 200 uA/V2. All PMOSFETs have the same WIL = 40um/0.5pμm, = -0.5V, = 50 μA/V2. IVAI (for all devices) = 100μ.A. Neglect the effect of VA on bias current. Please find (a) the transconductance gm and ro of Q2, (b) the voltage gain of the furst stage A1 and the second stage A2, (c) the input common-mode range, and (d) the output voltage range.(10%, 10%, 5%, 5%)

2.(25%) Consider the voltage amplifier of Figure 2 with a BJT device having β =100 when it is biased in the active region, the AC signal voltage Vsig, signal resistance = 10kΩ and coupling capacitors and which can block DC component and pass AC component. The voltage supplies = 10V and the thermal voltage VT= 25mV. The constant voltage drop 0.7V approximation can be used for the turn- on of a p-n junction, and the constant voltage drop ~ 0.2V approximation can be used when the BJT is biased in the saturation region. In addition, other resistances are also included, such like R1 = 2MΩ, R2 = 2MΩ, RE = 5kΩ, Rc = 5kΩ, RL= 5kΩ. Please come out following parameters: (a) transconductance gm, (b) input resistance, (c) overall AC voltage gain (d) Please describe the advantages of the existing of emitter resistance Re compared with no RE. (5%, 5%, 5%, 10%)

1. (15%) Figure 1 shows the inverting configuration voltage amplifier with R = 1 kΩ. (a) Please find the close loop gain of Vo/VI if the operational amplifier (op amp) is ideal. (b) Please find the close loop gain of Vo/VI  if the open loop gain of op amp is 10 V/V. (c) If the op amp is a low-pass STC withT , please find the high frequency close loop gain of Vo/VI at f= 1 GHz. (5%, 5%, 5%)  

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