3. (15%) Consider the voltage amplifier of Fig. 3(a) with Voo = 2 V, Rp = 20 kQ, and with a MOSFET specified to have Vt = 0.5 V,(W/L) = 5 mA/V2, and λ = 0 . Calculate the of the voltage transfer characteristic as shown in Fig. 3(b). (5%*3)

2.(25%) Consider the voltage amplifier of Figure 2 with a BJT device having β =100 when it is biased in the active region, the AC signal voltage Vsig, signal resistance = 10kΩ and coupling capacitors and which can block DC component and pass AC component. The voltage supplies = 10V and the thermal voltage VT= 25mV. The constant voltage drop 0.7V approximation can be used for the turn- on of a p-n junction, and the constant voltage drop ~ 0.2V approximation can be used when the BJT is biased in the saturation region. In addition, other resistances are also included, such like R1 = 2MΩ, R2 = 2MΩ, RE = 5kΩ, Rc = 5kΩ, RL= 5kΩ. Please come out following parameters: (a) transconductance gm, (b) input resistance, (c) overall AC voltage gain (d) Please describe the advantages of the existing of emitter resistance Re compared with no RE. (5%, 5%, 5%, 10%)

3. (15%) Consider the voltage amplifier of Fig. 3(a) with Voo = 2 V, Rp = 20 kQ, and with a MOSFET specified to have V_t = 0.5 V,(W/L) = 5 mA/V^2, and λ = 0 . Calculate the of the voltage transfer characteristic as shown in Fig. 3(b). (5%*3)

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