申論題

1. (30%) Figure 1 shows an amplifier made of a single MOSFET that is biased with I_D = 0.5 mA. Assume that all capacitors C₁, C₂ and C₃ are large enough to act like shorted in the frequency band of interest, and the parasitic capacitances of the MOSFET Q and the series gate resistance are negligible, The transistor Q has the device parameters: W/L = 80, = 50 μA/V², =0.7 V, λ.= 0.1.

(b) (10%) Find the bandwidth of the amplifier (in rad/s). Note:for Q in saturation.