19. In a Hall effect experiment, the cutrent is 2.0 x 10-3 A when 2.0 V is applied to a semiconductor of length 6.0 cm, width 3.0 cm, and depth 0.20 cm. A magnetic field of 2.0 T produces a Hall voltage of 2.0 x 104 V.
(A) cutrent density j = 3.3 A/m2, (B) number carrier density 6.0 X 1020/m3, (C) Hall Field EH =6.7x10-4 V/im, (D) resistivity ρ = 1.0 Ωㆍm, (E) All of the above are correct.