19. In a Hall effect experiment, the cutrent is 2.0 x 10-3 A when 2.0 V is applied to a semiconductor of length 6.0 cm, width 3.0 cm, and depth 0.20 cm. A magnetic field of 2.0 T produces a Hall voltage of 2.0 x 104 V.


(A) cutrent density j = 3.3 A/m2,
(B) number carrier density 6.0 X 1020/m3,
(C) Hall Field EH =6.7x10-4 V/im,
(D) resistivity ρ = 1.0 Ωㆍm,
(E) All of the above are correct.

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統計: A(0), B(0), C(0), D(1), E(0) #3207133

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