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103年 - 103 國立中山大學_碩士班招生考試_電機系(丙組)：計算機結構#110038
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題組內容
[Problem 5] (20%) Explain and compare the following terminology pairs.
(c) (5%) Direct-mapping cache vs Fully associate cache
其他申論題
(c) (5%) MIPS (Million Instructions per Second).
#471380
(d) (5%) CPU throughput (Programs per Second).
#471381
(a) (5%) NAT vs DHCP
#471382
(b) (5%) DRAM vs SDRAM
#471383
(d) (5%) Parallelism vs Pipelining
#471385
(a) Find the carrier concentrations. (10%)
#471386
(b) Find the Fermi level. (10%) (Note: Sketch the band diagram and mark Ec, Ev, EF and Ei； indicate clearly the location of the Fermi level with respect to intrinsic level.)
#471387
(a) Calculate the value of ND with an intrinsic region thickness of 20 Jum, and a permitted △E of 105 V/Im. △E is the change in electric field across the depletion region. (10%)
#471388
(b) An electric field of 3.5 x105 V/Im is needed to reach the saturation region. Find the bias voltage. (10%)
#471389
3. Calculate the maximum width of surface depletion region for a metal-SiO2-Si capacitor having NA=.(20%)
#471390
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