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102年 - 102 國立中山大學_碩士班招生考試_電機系(甲組)：半導體概論#110039
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題組內容
2. Consider a GaAs PIN diode
(b) An electric field of 3.5 x10
5
V/Im is needed to reach the saturation region. Find the bias voltage. (10%)
其他申論題
(d) (5%) Parallelism vs Pipelining
#471385
(a) Find the carrier concentrations. (10%)
#471386
(b) Find the Fermi level. (10%) (Note: Sketch the band diagram and mark Ec, Ev, EF and Ei； indicate clearly the location of the Fermi level with respect to intrinsic level.)
#471387
(a) Calculate the value of ND with an intrinsic region thickness of 20 Jum, and a permitted △E of 105 V/Im. △E is the change in electric field across the depletion region. (10%)
#471388
3. Calculate the maximum width of surface depletion region for a metal-SiO2-Si capacitor having NA=.(20%)
#471390
4. A solar cell under an illumination of 80 W/Im2 has a short circuit current of 40 mA and an open circuit output voltage of 0.55V. What are the short circuit current and open circuit voltages when the light intensity is halved? (20%)
#471391
5. Consider the p'n junction of a uniformly doped silicon n-channel JFET has doping concentrations of NA = and ND = at T = 300K. The metallurgical channel thickness is 0.8 μm. Determine the built-in potential barrier and the pinchoff voltage of the JFET. (20%)
#471392
簡答題一、 食品業者的產品經主管機關抽驗後，若對檢驗結果有不同意見時，應如何處置？
#471393
二、 我國「營養標示」應標示那些項目，其數值使用單位為何？
#471394
三、 美國食品法規對於食品添加的物質訂有嚴謹管理規範，其他各國亦參考運用。請說明一個食品添加的物質如何被認定為 GRAS？
#471395
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