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題組內容

1. A silicon sample is doped with donor atoms/cm³at room temperature (300K). The intrinsic carrier density in Si is 9.65x10⁹

(a) Find the carrier concentrations. (10%)

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(b) Find the Fermi level. (10%) (Note: Sketch the band diagram and mark Ec, Ev, EF and Ei； indicate clearly the location of the Fermi level with respect to intrinsic level.)

(a) Calculate the value of ND with an intrinsic region thickness of 20 Jum, and a permitted △E of 105 V/Im. △E is the change in electric field across the depletion region. (10%)

(b) An electric field of 3.5 x105 V/Im is needed to reach the saturation region. Find the bias voltage. (10%)

3. Calculate the maximum width of surface depletion region for a metal-SiO2-Si capacitor having NA=.(20%)

4. A solar cell under an illumination of 80 W/Im2 has a short circuit current of 40 mA and an open circuit output voltage of 0.55V. What are the short circuit current and open circuit voltages when the light intensity is halved? (20%)

5. Consider the p'n junction of a uniformly doped silicon n-channel JFET has doping concentrations of NA = and ND = at T = 300K. The metallurgical channel thickness is 0.8 μm. Determine the built-in potential barrier and the pinchoff voltage of the JFET. (20%)

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