阿摩線上測驗
登入
首頁
>
中山◆電機◆計算機結構
>
103年 - 103 國立中山大學_碩士班招生考試_電機系(丙組)：計算機結構#110038
>
題組內容
[Problem 5] (20%) Explain and compare the following terminology pairs.
(d) (5%) Parallelism vs Pipelining
其他申論題
(d) (5%) CPU throughput (Programs per Second).
#471381
(a) (5%) NAT vs DHCP
#471382
(b) (5%) DRAM vs SDRAM
#471383
(c) (5%) Direct-mapping cache vs Fully associate cache
#471384
(a) Find the carrier concentrations. (10%)
#471386
(b) Find the Fermi level. (10%) (Note: Sketch the band diagram and mark Ec, Ev, EF and Ei； indicate clearly the location of the Fermi level with respect to intrinsic level.)
#471387
(a) Calculate the value of ND with an intrinsic region thickness of 20 Jum, and a permitted △E of 105 V/Im. △E is the change in electric field across the depletion region. (10%)
#471388
(b) An electric field of 3.5 x105 V/Im is needed to reach the saturation region. Find the bias voltage. (10%)
#471389
3. Calculate the maximum width of surface depletion region for a metal-SiO2-Si capacitor having NA=.(20%)
#471390
4. A solar cell under an illumination of 80 W/Im2 has a short circuit current of 40 mA and an open circuit output voltage of 0.55V. What are the short circuit current and open circuit voltages when the light intensity is halved? (20%)
#471391
阿摩線上測驗
登入
阿摩線上測驗
登入