申論題

5. (20%) For a conventional planar n-MOSFET, source/drain regions are heavily doped with a concentration of N_D= and the channel has a doping level of . The oxide is 1-nm HfO₂with a dielectric constant of 32 and the gate is aluminum (work function Φ_m = 4.1 eV). Trapped charges are inside the oxide and adjacent to the oxide/semiconductor interface with a density of The gate length is 1 μm. The dielectric constant of Si is 11.7.F/cm

(d) (5 %) If Si substrate is biased under 10 V. Please calculate the △V_T.