題組內容

Semiconductor Physics
1. For an N-type silicon sample at room temperature, when an electric field with a strength of 1000 V/cm is applied to the sample, the hole velocity is measured and found to be 2 x 105 cm/sec. At room temperature, use 2.3kT/q = 60 mV and the intrinsic carrier concentration 61bacbf365628.jpg

(a) Estimate the thermal equilibrium electron and hole concentrations, indicating which is the minority carrier. (5%)