(c) The sample is used to make an integrated circuit resistor. The width and beight of the sample are 10 um and l um, respectively, and the length of the sample is 20 um. Calculate the resistance of the sample. (5%)

問題4:依據腹部電腦斷層影像中顯示的現象，請問接下來的處置為何及其風險及須注意 事項？ (15 %)

(後續發展)病人接受緊急腹部探查手術，手術中發現病患大小腸有三分之二都已壞死，家屬拒絕切除壞死腸道，腹部傷口縫合後病人立即送回加護病房進一步處理。第二天病人生命徵象不穩定，病人體溫34.5℃、血壓80/60 mm、心跳每分鐘140下、呼吸每分鐘26下，在呼 吸器VC/ACMV模式、潮氣量600ml、氧氣分壓0.5、末端吐氣正壓10cm-H2O使用下，動脈血氣體分析為 pH 7.256, PaO2 76 mm Hg, PaCO2 25 mm Hg。抽血檢驗結果：WBC 800/£L，PLT 3.2x10 3 /£L，Albumin 2.1 g/dL，Bun 38 mg/dL，creatinine 3 mg/dL，胸 部X光顯示雙側肺部浸潤。 問題5: 依上述病情，請問接下來的術後的處置為何，包括呼吸器的設定、止痛要及鎮靜 劑的使用及其預後？(15 %)

(a) Estimate the thermal equilibrium electron and hole concentrations, indicating which is the minority carrier. (5%)

(b) Find the position of Fermi level Ef with respect to the intrinsic Fermi level Ei, (i.e. Ef - Ei). (5%)

(a)(5%)

(b) .(5%)

(c) (5%)

Diodes and BJT 3.Please qualitatively plot the steady-state depletion region widths and the minority carrier concentration profiles in a pn junction under forward bias, zero bias, and reverse bias. Assume that the p-type doping concentration is larger than that of n-type. (15%)

4.The common-base current gain a of an NPN BJT can be expressed as a = γaTδ where a is the emitter injection efficiency factor, aT  is the base transport factor, andδ is the recombination factor. To have an a as large (close to 1) as possible, cach of these factors must be close to l as well. For these three factors, respectively, what about device design and/or operation bias must be done to make them large? (15%) If is increased, will a increase or decrease? Why? (5%)

(a) Given that the work function of the Al is slightly larger than , the electron affinity of Si, and assumed that the oxide is perfect (completely insulating, no fixed charge/interface states within the oxide and at the interface), please plot the band diagrams of the MOS capacitor when the MOS capacitor is biased at equilibrium and threshold, respectively. You have to include (vacuum level), Ec (conduction band edge), Ei (intrinsic level) , Ev (valence band edge) and EF (Fermi level) in you plots. Please also indicate on you plot the condition that the MOS structure reaches threshold. (10%)