申論題

2.For the following 3 N-type silicon samples, find the position of Fermi level E_f with respect to the intrinsic Fermi level E, at room temperature (i.e. E_f- E_i) assuming full ionization for all 3 cascs. Check whether the above assumption of full ionization of each case is correct with the calculated Fermi level. Assume the donor level is 0.05 eV below E_c and the energy bandgap E_g = 1.1 eV. At room temperature, use 2.3kT/q = 60 mV and the intrinsic carrier concentration.

(b) .(5%)