5. Consider the p'n junction of a uniformly doped silicon n-channel JFET has doping concentrations of NA = 62eb5e429d356.jpgand ND =62eb5e660b094.jpg at T = 300K. The metallurgical channel thickness is 0.8 μm. Determine the built-in potential barrier and the pinchoff voltage of the JFET. (20%)