102年 - 102 國立中山大學_碩士班招生考試_電機系(甲組)：半導體概論#110039

(a) Find the carrier concentrations. (10%)

(b) Find the Fermi level. (10%) (Note: Sketch the band diagram and mark E_c, E_v, E_F and E_i； indicate clearly the location of the Fermi level with respect to intrinsic level.)

(a) Calculate the value of N_D with an intrinsic region thickness of 20 Jum, and a permitted △E of 10⁵ V/Im. △E is the change in electric field across the depletion region. (10%)

(b) An electric field of 3.5 x10⁵ V/Im is needed to reach the saturation region. Find the bias voltage. (10%)

3. Calculate the maximum width of surface depletion region for a metal-SiO₂-Si capacitor having N_A=.(20%)

4. A solar cell under an illumination of 80 W/Im² has a short circuit current of 40 mA and an open circuit output voltage of 0.55V. What are the short circuit current and open circuit voltages when the light intensity is halved? (20%)

5. Consider the p'n junction of a uniformly doped silicon n-channel JFET has doping concentrations of N_A= and N_D = at T = 300K. The metallurgical channel thickness is 0.8 μm. Determine the built-in potential barrier and the pinchoff voltage of the JFET. (20%)

102年 - 102 國立中山大學_碩士班招生考試_電機系(甲組)：半導體概論#110039

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