所屬科目：研究所、轉學考(插大)◆電子學
1.(15%) Please analyze the operational cireuit shown as Figure 1. Find the output current as a function of
(b) (10%) Please find the small-signal gain of
6. (10%) Before the read operation, both bit lines (BL and BLB) are precharged to Find the maximum allowable (W/L)a for the access transistors of the SRAM cell shown in Figure 5 so that in a read operation, the voltages at Q and do not change by more than a threshold voltage IVtl. Assume that the SRAM is fabricated in a 0.18 um technology for which= 0.5 V and that (W/L)n = 1.5 for pull-down devices.
阿摩線上測驗
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阿摩線上測驗
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as a
function of 
Find the maximum allowable (W/L)a for the access transistors of the SRAM cell shown in Figure 5 so that in a read operation, the voltages at Q and 
do not change by more than a threshold voltage IVtl. Assume that the SRAM is fabricated in a 0.18 um technology for which
= 0.5 V and that (W/L)n = 1.5 for pull-down devices.