申論題

6. (10%) Before the read operation, both bit lines (BL and BLB) are precharged to Find the maximum allowable (W/L)_a for the access transistors of the SRAM cell shown in Figure 5 so that in a read operation, the voltages at Q and do not change by more than a threshold voltage IV_tl. Assume that the SRAM is fabricated in a 0.18 um technology for which= 0.5 V and that (W/L)_n = 1.5 for pull-down devices.