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申論題資訊

試卷:110年 - 110台灣聯合大學系統_碩士班招生考試_電機類:固態電子元件#104944
科目:研究所、轉學考(插大)◆固態電子元件
年份:110年
排序:0

申論題內容

4.The common-base current gain a of an NPN BJT can be expressed as a = γaTδ where a is the emitter injection efficiency factor, aT  is the base transport factor, andδ is the recombination factor. To have an a as large (close to 1) as possible, cach of these factors must be close to l as well. For these three factors, respectively, what about device design and/or operation bias must be done to make them large? (15%) If 61bace0561950.jpg is increased, will a increase or decrease? Why? (5%)