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申論題資訊

試卷:110年 - 110台灣聯合大學系統_碩士班招生考試_電機類:固態電子元件#104944
科目:研究所、轉學考(插大)◆固態電子元件
年份:110年
排序:0

題組內容

MOS capacitor and MOSFET
5.Assumed that there is an Al/ SiO2/ p -Si metal-oxide-semiconductor (MOS) capacitor. Denote the permittivity of SiO2 (Si) as61bace4abec7f.jpg and it is given that the thickness of SiO2 is 61bace7d72ac1.jpg, the p-Si is uniformly doped to NA, and the MOS capacitor can be regarded as one-dimensional.

申論題內容

(d) Explain the difference between enhancement type and depletion type, for both n-channel MOSFET and p-channel MOSFET, in term of threshold voltage. If the Al / SiO2 / p - Si MOS structure in (a) is part of an MOSFET, is this MOSFET enhancement type or depletion type? Repeat for the Al / SiO2 /n- Si MOS structure in (c). (3%, 2%,2%)