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申論題資訊

試卷:110年 - 110台灣聯合大學系統_碩士班招生考試_電機類:固態電子元件#104944
科目:研究所、轉學考(插大)◆固態電子元件
年份:110年
排序:0

題組內容

MOS capacitor and MOSFET
5.Assumed that there is an Al/ SiO2/ p -Si metal-oxide-semiconductor (MOS) capacitor. Denote the permittivity of SiO2 (Si) as61bace4abec7f.jpg and it is given that the thickness of SiO2 is 61bace7d72ac1.jpg, the p-Si is uniformly doped to NA, and the MOS capacitor can be regarded as one-dimensional.

申論題內容

(c) Repeat (b), i.c., write down61bacfe4f26a2.jpg , for an Al/ SiO2 /n -Si structure, albeit with NA replaced by ND. Denote again the metal work function asΦM and express the work function of Si in tem of 61bad0306a397.jpg . (6%)