所屬科目：中山◆電機◆半導體概論
1. The resistivity of a silicon bulk is reduced by1.5 Ω-cm after doping donor atoms. The electron mobilities of Si are 1300 and 1100 cm2/V-s before and after the doping process. Calculate the initial electron density in this material before the donors are added. T = 300 K. (20%)
(b) Calculate the change in conductivity due to the illumination. The electron and hole mobilities are μn =8500 cm2/V-s and μp , = 400 cm2/V-s, respectively. (10%,10%)
5. For an abrupt p+-n silicon diode, the doping concentration in the n-region is. The width of the n-region is 3 um. Assuming this width is much smaller than the hole diffusion length. Calculate the reverse saturation current at 300 K. The area of the diode is 100μm ✖ 100μm and the hole mobility is 350 cm2/V-s. (20%)
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donor atoms. The
electron mobilities of Si are 1300 and 1100 cm2/V-s before and after the doping process. Calculate the
initial electron density in this material before the donors are added. T = 300 K. (20%)
. The width of the n-region is 3 um. Assuming this width is much smaller than the hole diffusion length. Calculate the reverse saturation current at 300 K. The area of the diode is 100μm ✖ 100μm and the hole mobility is 350 cm2/V-s. (20%)