題組內容
4. A p-type GaAs is doped with
. Assume for the recombination lifetime of both electrons and holes are
. The sample is under illumination resulting in a constant and spatially uniform generation rate of electron-hole pairs G=
. T= 300 K.
4. A p-type GaAs is doped with
. Assume for the recombination lifetime of both electrons and holes are
. The sample is under illumination resulting in a constant and spatially uniform generation rate of electron-hole pairs G=
. T= 300 K.