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申論題資訊

試卷:106年 - 106 國立中山大學_碩士班招生考試_電機系(甲組):半導體概論#108990
科目:中山◆電機◆半導體概論
年份:106年
排序:0

題組內容

4. A p-type GaAs is doped with 62c67f0add553.jpg. Assume for the recombination lifetime of both electrons and holes are62c67f2b8365a.jpg. The sample is under illumination resulting in a constant and spatially uniform generation rate of electron-hole pairs G=62c67f47597ec.jpg. T= 300 K.

申論題內容

(a) Calculate the steady-state electron density.