申論題

5. For an abrupt p⁺-n silicon diode, the doping concentration in the n-region is. The width of the n-region is 3 um. Assuming this width is much smaller than the hole diffusion length. Calculate the reverse saturation current at 300 K. The area of the diode is 100μm ✖ 100μm and the hole mobility is 350 cm^2/V-s. (20%)