所屬科目：中山◆電機◆半導體概論
1. Consider an n-channel MOSFET with 15um gate width and 2um gate length. The oxide capacitance is . If the MOSFET is operated in a non-saturation region with a drain-to-source voltage = 0.1V. The drain current ID = 35 μA at gate-to-source voltage = 2.5V, ID = 75 μA. Determine the (a) electron mobility (b) threshold voltage (20%)
2. Consider a contact between tungsten and n-type GaAs. The metal work function of tungsten is 4.55 V. Assume the GaAs is doped to a concentration of and the metal-semiconductor diode is operated under zero bias. Determine the (a) theoretical barrier height (b) built-in potential barrier (c) maximum electric field (20%)
3. An npn silicon (Er = 11.9) bipolar transistor (shown in Fig. 1) at T = 300K has uniform dopings of . The transistor is operating in the inverse- active mode with = 0.565 V. (a) Determine the minority carrier concentrations at x = xB and x" = 0(b) If the metallurgical base width is 1.1 um, determine the neutral base width (20%)
4. Consider an n-type semiconductor at T = 300K in thermal equilibrium. Assume that the donor concentration varies as over the range and L = 10 μm. (a) Determine the electric field as a function of x for 0 ≤x ≤ L(b) Calculate the potential difference x = 0 and x = L (with the potential at x = 0 being positive with respect to that at x = L) (20%)
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. If the MOSFET is operated in a non-saturation region with a drain-to-source voltage 
= 0.1V. The drain current ID = 35 μA at gate-to-source voltage
= 2.5V, ID = 75 μA. Determine the (a) electron mobility (b) threshold voltage (20%)
and the metal-semiconductor diode is operated under zero bias. Determine the (a) theoretical barrier height (b) built-in potential barrier (c) maximum electric field (20%)
. The transistor is operating in the inverse- active mode with 
= 0.565 V. (a) Determine the minority carrier concentrations at x = xB and x" = 0(b) If the metallurgical base width is 1.1 um, determine the neutral base width (20%)
over the range 
and L = 10 μm. (a) Determine the electric field as a function of x for 0 ≤x ≤ L(b) Calculate the potential difference x = 0 and x = L (with the potential at x = 0 being positive with respect to that at x = L) (20%)