題組內容

4. A p-type GaAs is doped with . Assume for the recombination lifetime of both electrons and holes are. The sample is under illumination resulting in a constant and spatially uniform generation rate of electron-hole pairs G=. T= 300 K.

(b) Calculate the change in conductivity due to the illumination. The electron and hole mobilities are μ_n =8500 cm²/V-s and μ_p , = 400 cm²/V-s, respectively. (10%,10%)

題組內容

(b) Calculate the change in conductivity due to the illumination. The electron and hole mobilities are μ_n =8500 cm²/V-s and μ_p , = 400 cm²/V-s, respectively. (10%,10%)

相關申論題

相關試卷

題組內容

(b) Calculate the change in conductivity due to the illumination. The electron and hole mobilities are μn =8500 cm2/V-s and μp , = 400 cm2/V-s, respectively. (10%,10%)

相關申論題

相關試卷

(b) Calculate the change in conductivity due to the illumination. The electron and hole mobilities are μ_n =8500 cm²/V-s and μ_p , = 400 cm²/V-s, respectively. (10%,10%)