申論題

4. A p-type GaAs is doped with . Assume for the recombination lifetime of both electrons and holes are. The sample is under illumination resulting in a constant and spatially uniform generation rate of electron-hole pairs G=. T= 300 K.

(b) Calculate the change in conductivity due to the illumination. The electron and hole mobilities are μ_n =8500 cm²/V-s and  μ_p , = 400 cm²/V-s, respectively. (10%,10%)