5. Consider a GaAs pn junction initially biased at 0.7V at T = 300K. Assume the temperature increases to T = 330K. Calculate the change in the forward-bias voltage required to maintain a constant current through the junction. (20%)

4. Consider an n-type semiconductor at T = 300K in thermal equilibrium. Assume that the donor concentration varies as over the range and L = 10 μm. (a) Determine the electric field as a function of x for 0 ≤x ≤ L(b) Calculate the potential difference x = 0 and x = L (with the potential at x = 0 being positive with respect to that at x = L) (20%)

5. Consider a GaAs pn junction initially biased at 0.7V at T = 300K. Assume the temperature increases to T = 330K. Calculate the change in the forward-bias voltage required to maintain a constant current through the junction. (20%)

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