1. Consider an n-channel MOSFET with 15um gate width and 2um gate length. The oxide capacitance is . If the MOSFET is operated in a non-saturation region with a drain-to-source voltage = 0.1V. The drain current I_D = 35 μA at gate-to-source voltage = 2.5V,  I_D = 75 μA. Determine the (a) electron mobility (b) threshold voltage (20%)

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