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申論題資訊

試卷:110年 - 110 國立中山大學_碩士班招生考試_電機系(甲組):半導體概論#104342
科目:中山◆電機◆半導體概論
年份:110年
排序:0

申論題內容

3. An npn silicon (Er = 11.9) bipolar transistor (shown in Fig. 1) at T = 300K has uniform dopings of 61a596aec1a6c.jpg. The transistor is operating in the inverse- active mode with 61a5972074c66.jpg = 0.565 V. (a) Determine the minority carrier concentrations at x = xB and x" = 0(b) If the metallurgical base width is 1.1 um, determine the neutral base width (20%)
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