2. A Si p-n junction has same doping concentration cm' in each side. The peak electric filed in the junction at breakdown is 2 x 105VIcm. Calculate the reverse breakdown voltage of this junction at 300K. (20%)

4. For heterojunctions in the GaAs-AlGaAs system, the direct bandgap difference is accommodated approximately in the conduction band and in the valence band. The bandgap of AlGaAs is 1.85 eV if Al composition is 0.3. Draw the band diagrams of two heterojunctions: (a)As on n-GaAs (b)As on n-GaAs (20%)

2. A Si p-n junction has same doping concentration cm' in each side. The peak electric filed in the junction at breakdown is 2 x 10⁵VIcm. Calculate the reverse breakdown voltage of this junction at 300K. (20%)

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