5. In a metal-Si Schottky barrier contact, the barrier height is 0.85 eV and the effective Richardson constant is 110 A/K2-cm2 . Calculate the ratio of the injected hole current to the electron current at 300K. Dp = 12 cm2/s, τp = s, and (20%)

4. For heterojunctions in the GaAs-AlGaAs system, the direct bandgap difference is accommodated approximately in the conduction band and in the valence band. The bandgap of AlGaAs is 1.85 eV if Al composition is 0.3. Draw the band diagrams of two heterojunctions: (a)As on n-GaAs (b)As on n-GaAs (20%)

5. In a metal-Si Schottky barrier contact, the barrier height is 0.85 eV and the effective Richardson constant is 110 A/K²-cm² . Calculate the ratio of the injected hole current to the electron current at 300K. D_p = 12 cm²/s, τ_p = s, and (20%)

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