4. Consider an n-channel Si MOSFET with N = at T= 300 K. The oxide is SiO2 with a thickness of 300 . The threshold voltage is found to be VT = 0.7 V when an applied source-to-body voltage = 2.5 V. What is the threshold voltage at = 5 V ? (20%)

2. The electron concentration in a semiconductor material is given by for 0≤x≤L The length of the material L is 100 um. The electron mobility is 1500 cm2/V-s at 300 K. An electric field is applied such that the total electron current density is a constant over the given range of x and is Jn = -95 A/cm2. Determine the required electric field versus distance function. (20%)

4. Consider an n-channel Si MOSFET with N = at T= 300 K. The oxide is SiO₂ with a thickness of 300 . The threshold voltage is found to be V_T= 0.7 V when an applied source-to-body voltage = 2.5 V. What is the threshold voltage at = 5 V ? (20%)

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