申論題

5. A silicon p-n-p transistor has following impurity concentrations.The base width is 1.5 um and the device cross-sectional area is 0.3 mm² When the device is operated in the active mode, the emitter-base junction is forward biased to 0.7 V and the base- collector junction is reverse biased to 6 V. Calculate the neutral base width. (20%)