1. What range of impurity gradient should be considered if we want to obtain the breakdown voltage = 250 to 750 V in a linearly graded Si p-n junction? Assume the breakdown maximum electric field =2.5 x 105 V/cm, = 11.9.

2. Copper is deposited on an n-type Si substrate to form an ideal Schottky diode. = 4.65 eV, the electron affinity is 4.01 eV, cm3. Calculate the barrier height, the built-in potential, the depletion-layer width, and the maximum field at zero bias. T = 300K. Effective density of states in conduction band is 2.86 X .

1. What range of impurity gradient should be considered if we want to obtain the breakdown voltage = 250 to 750 V in a linearly graded Si p-n junction? Assume the breakdown maximum electric field =2.5 x 10⁵ V/cm, = 11.9.

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