4. Calculate the emitter injection efficiency. Assume the following transistor parameters:
Doping concentrations in base and emitter are 
and 
. Widths of neutral base and enitter are 
= 0.8 um and 
= 0.5 pm.
Minority carrier diffusion coefficients in base and emitter are 
= 20 cm2/s and 
= 10 cm2/s.
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