5. Calculate the threshold voltage shift due to short-channel effect. Consider an n-channel MOSFET with , channel length L = 1 um, diffused junction depth = 0.3 μm, oxide thickness , and dielectric constant of oxide is 3.9.

2. Copper is deposited on an n-type Si substrate to form an ideal Schottky diode. = 4.65 eV, the electron affinity is 4.01 eV, cm3. Calculate the barrier height, the built-in potential, the depletion-layer width, and the maximum field at zero bias. T = 300K. Effective density of states in conduction band is 2.86 X .

5. Calculate the threshold voltage shift due to short-channel effect. Consider an n-channel MOSFET with , channel length L = 1 um, diffused junction depth = 0.3 μm, oxide thickness , and dielectric constant of oxide is 3.9.

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