3. Derive the depletion layer width of a p-n junction. Doping concentrations are . Dielectric constant is and the built-in potential is .

2. Copper is deposited on an n-type Si substrate to form an ideal Schottky diode. = 4.65 eV, the electron affinity is 4.01 eV, cm3. Calculate the barrier height, the built-in potential, the depletion-layer width, and the maximum field at zero bias. T = 300K. Effective density of states in conduction band is 2.86 X .